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JMnic
Product Specification
Silicon NPN Power Transistors
2SC3170
DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 15 2 W UNIT V V V A A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A , L=25mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 MIN 400 TYP.
2SC3170
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V
1.0 1.5 100 100 |I |I
V V A A
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A ; IB1=-IB2=0.6A VCC=100V 1.0 3.0 1.0 |I |I |I s s s
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3170
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3

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